0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1gate 2 source 3 drain 2SK1133 features directly driven by ics having a 5v power source. not necessary to consider driving current because of its high input impedance. possible to reduce the number of parts by omitting the biasresistor. marking marking g11 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =50v,v gs =0 -10 a gate leakage current i gss v gs = 7v,v ds =0 10 a gate to source cutoff voltage v gs(off) v ds =5.0v,i d =1 a 1.0 1.7 2.0 v forward transfer admittance y fs v ds =5.0v,i d =20ma 20 40 ms drain to source on-state resistance r ds(on) v gs =4v,i d =20ma 16 50 input capacitance c iss 7pf output capacitance c oss 6pf reverse transfer capacitance c rss 2pf turn-on delay time t d(on) 6ns rise time t r 25 ns turn-off delay time t d(off) 36 ns fall time t f 35 ns v ds =5.0v,v gs =0,f=1mhz v gs(on) =0,v dd =5v,f=1mhz absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 50 v gate to source voltage v gss 7.0 v drain current (dc) i d 100 ma drain current(pulse) * i d 200 ma power dissipation p d 200 m w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10ms, duty cycle 50% product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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